UJ3C065030B3 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 650V 65A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 21.22 EUR |
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Technische Details UJ3C065030B3 onsemi
Description: MOSFET N-CH 650V 65A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Cascode SiCJFET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V, Power Dissipation (Max): 242W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V.
Weitere Produktangebote UJ3C065030B3 nach Preis ab 21.68 EUR bis 35.9 EUR
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UJ3C065030B3 | Hersteller : Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A Mounting: SMD Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Gate charge: 51nC On-state resistance: 27mΩ Drain current: 47A Gate-source voltage: ±25V Pulsed drain current: 230A Power dissipation: 250W Drain-source voltage: 650V Case: D2PAK Kind of transistor: cascode Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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UJ3C065030B3 | Hersteller : Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 47A Mounting: SMD Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Gate charge: 51nC On-state resistance: 27mΩ Drain current: 47A Gate-source voltage: ±25V Pulsed drain current: 230A Power dissipation: 250W Drain-source voltage: 650V Case: D2PAK Kind of transistor: cascode Version: ESD |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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UJ3C065030B3 | Hersteller : Qorvo |
SiC MOSFETs 650V/30mO,SICFET,G3,TO263-3 |
auf Bestellung 1441 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065030B3 | Hersteller : onsemi |
SiC MOSFETs 650V/30MOSICFETG3TO263-3 |
auf Bestellung 1251 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065030B3 | Hersteller : Qorvo / UnitedSiC |
MOSFET 650V/30mOhm, SiC, CASCODE, G3, D2PAK-3L |
auf Bestellung 2180 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065030B3 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 65A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 3703 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065030B3 | Hersteller : ONSEMI |
Description: ONSEMI - UJ3C065030B3 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 65 A, 650 V, 0.027 ohm, D2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 65A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 242W Bauform - Transistor: D2PAK Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.027ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 385 Stücke: Lieferzeit 14-21 Tag (e) |
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UJ3C065030B3 | Hersteller : ONSEMI |
Description: ONSEMI - UJ3C065030B3 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 65 A, 650 V, 0.027 ohm, D2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 65A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 242W Bauform - Transistor: D2PAK Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.027ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 385 Stücke: Lieferzeit 14-21 Tag (e) |