UJ3C065030T3S Qorvo
Hersteller: Qorvo
Description: MOSFET N-CH 650V 85A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 650V 85A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 912 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 29.66 EUR |
10+ | 26.14 EUR |
100+ | 22.61 EUR |
500+ | 20.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details UJ3C065030T3S Qorvo
Description: QORVO - UJ3C065030T3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 85 A, 650 V, 0.027 ohm, TO-220, tariffCode: 85412900, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 85A, hazardous: false, rohsPhthalatesCompliant: YES, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 441W, Bauform - Transistor: TO-220, Anzahl der Pins: 3Pin(s), Produktpalette: TUK SGACK902S Keystone Coupler, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 12V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.027ohm, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote UJ3C065030T3S nach Preis ab 19.48 EUR bis 39.6 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
UJ3C065030T3S | Hersteller : Qorvo / UnitedSiC | MOSFET 650V/30mOhm, SiC, CASCODE, G3, TO-220-3L, REDUCED Rth |
auf Bestellung 1574 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
UJ3C065030T3S | Hersteller : Qorvo | MOSFET 650V/30mO,SICFET,G3,TO220-3 |
auf Bestellung 1336 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
UJ3C065030T3S | Hersteller : Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 62A Pulsed drain current: 230A Power dissipation: 441W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 27mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
UJ3C065030T3S | Hersteller : Qorvo (UnitedSiC) |
Category: THT N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 62A Type of transistor: N-JFET/N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 62A Pulsed drain current: 230A Power dissipation: 441W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 27mΩ Mounting: THT Gate charge: 51nC Features of semiconductor devices: ESD protected gate |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
UJ3C065030T3S | Hersteller : QORVO |
Description: QORVO - UJ3C065030T3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 85 A, 650 V, 0.027 ohm, TO-220 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 85A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 441W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.027ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 504 Stücke: Lieferzeit 14-21 Tag (e) |