UJ3C065080B3 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 650V 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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Technische Details UJ3C065080B3 onsemi
Description: MOSFET N-CH 650V 25A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V.
Weitere Produktangebote UJ3C065080B3 nach Preis ab 9.29 EUR bis 85.08 EUR
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UJ3C065080B3 | onsemi |
Description: MOSFET N-CH 650V 25A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 5690 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065080B3 | Qorvo |
SiC MOSFETs 650V/80mO,SICFET,G3,TO263-3 |
auf Bestellung 570 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065080B3 | Qorvo / UnitedSiC |
MOSFET 650V/80mOhm, SiC, CASCODE, G3, D2PAK-3L |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065080B3 | onsemi |
SiC MOSFETs 650V/80MOSICFETG3TO263-3 |
auf Bestellung 467 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065080B3 | Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A Technology: SiC Mounting: SMD Case: D2PAK Gate charge: 51nC On-state resistance: 80mΩ Drain current: 18.2A Gate-source voltage: ±25V Power dissipation: 115W Pulsed drain current: 65A Drain-source voltage: 650V Version: ESD Type of transistor: N-JFET / N-MOSFET Kind of transistor: cascode Polarisation: unipolar |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| UJ3C065080B3 |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 650V 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 5690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.27 EUR |
| 10+ | 11.47 EUR |
| 100+ | 10.06 EUR |
| UJ3C065080B3 |
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Hersteller: Qorvo
SiC MOSFETs 650V/80mO,SICFET,G3,TO263-3
SiC MOSFETs 650V/80mO,SICFET,G3,TO263-3
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.91 EUR |
| 25+ | 12.09 EUR |
| 100+ | 10.42 EUR |
| 250+ | 9.62 EUR |
| 800+ | 9.29 EUR |
| UJ3C065080B3 |
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Hersteller: Qorvo / UnitedSiC
MOSFET 650V/80mOhm, SiC, CASCODE, G3, D2PAK-3L
MOSFET 650V/80mOhm, SiC, CASCODE, G3, D2PAK-3L
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.26 EUR |
| 25+ | 15.58 EUR |
| 250+ | 12.92 EUR |
| 800+ | 10.31 EUR |
| 2400+ | 10.28 EUR |
| UJ3C065080B3 |
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Hersteller: onsemi
SiC MOSFETs 650V/80MOSICFETG3TO263-3
SiC MOSFETs 650V/80MOSICFETG3TO263-3
auf Bestellung 467 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.28 EUR |
| 10+ | 13.28 EUR |
| 100+ | 11.13 EUR |
| 500+ | 11.1 EUR |
| 800+ | 10.36 EUR |
| UJ3C065080B3 |
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Hersteller: Qorvo (UnitedSiC)
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Technology: SiC
Mounting: SMD
Case: D2PAK
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 18.2A
Gate-source voltage: ±25V
Power dissipation: 115W
Pulsed drain current: 65A
Drain-source voltage: 650V
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Kind of transistor: cascode
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A
Technology: SiC
Mounting: SMD
Case: D2PAK
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 18.2A
Gate-source voltage: ±25V
Power dissipation: 115W
Pulsed drain current: 65A
Drain-source voltage: 650V
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Kind of transistor: cascode
Polarisation: unipolar
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |