UJ3C065080B3 Qorvo
Hersteller: QorvoDescription: MOSFET N-CH 650V 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 6.41 EUR |
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Technische Details UJ3C065080B3 Qorvo
Description: MOSFET N-CH 650V 25A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V.
Weitere Produktangebote UJ3C065080B3 nach Preis ab 8.64 EUR bis 71.5 EUR
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UJ3C065080B3 | Hersteller : Qorvo |
Description: MOSFET N-CH 650V 25A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 5988 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065080B3 | Hersteller : Qorvo / UnitedSiC |
MOSFET 650V/80mOhm, SiC, CASCODE, G3, D2PAK-3L |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065080B3 | Hersteller : Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A Mounting: SMD Drain-source voltage: 650V Drain current: 18.2A On-state resistance: 80mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 115W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 51nC Technology: SiC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 65A Case: D2PAK Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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UJ3C065080B3 | Hersteller : Qorvo (UnitedSiC) |
Category: SMD N channel transistors Description: Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A Mounting: SMD Drain-source voltage: 650V Drain current: 18.2A On-state resistance: 80mΩ Type of transistor: N-JFET/N-MOSFET Power dissipation: 115W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 51nC Technology: SiC Kind of transistor: cascode Gate-source voltage: ±25V Pulsed drain current: 65A Case: D2PAK |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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UJ3C065080B3 | Hersteller : QORVO |
Description: QORVO - UJ3C065080B3 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 25 A, 650 V, 0.08 ohm, D2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 115W Bauform - Transistor: D2PAK Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.08ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 574 Stücke: Lieferzeit 14-21 Tag (e) |
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UJ3C065080B3 | Hersteller : QORVO |
Description: QORVO - UJ3C065080B3 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 25 A, 650 V, 0.08 ohm, D2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 115W Bauform - Transistor: D2PAK Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.08ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 574 Stücke: Lieferzeit 14-21 Tag (e) |