UJ3C065080B3 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 650V 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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Technische Details UJ3C065080B3 onsemi
Description: ONSEMI - UJ3C065080B3 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 25 A, 650 V, 0.08 ohm, D2PAK, tariffCode: 85412900, Drain-Source-Spannung Vds: 650V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 25A, hazardous: false, rohsPhthalatesCompliant: YES, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 115W, Bauform - Transistor: D2PAK, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 12V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.08ohm, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote UJ3C065080B3 nach Preis ab 9.29 EUR bis 18.28 EUR
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UJ3C065080B3 | onsemi |
Description: MOSFET N-CH 650V 25A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 5690 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065080B3 | Qorvo |
SiC MOSFETs 650V/80mO,SICFET,G3,TO263-3 |
auf Bestellung 570 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065080B3 | Qorvo / UnitedSiC |
MOSFET 650V/80mOhm, SiC, CASCODE, G3, D2PAK-3L |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C065080B3 | onsemi |
SiC MOSFETs 650V/80MOSICFETG3TO263-3 |
auf Bestellung 467 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ3C065080B3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 650V 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 5690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.27 EUR |
| 10+ | 11.47 EUR |
| 100+ | 10.06 EUR |
| UJ3C065080B3 |
|
Hersteller: Qorvo
SiC MOSFETs 650V/80mO,SICFET,G3,TO263-3
SiC MOSFETs 650V/80mO,SICFET,G3,TO263-3
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.91 EUR |
| 25+ | 12.09 EUR |
| 100+ | 10.42 EUR |
| 250+ | 9.62 EUR |
| 800+ | 9.29 EUR |
| UJ3C065080B3 |
|
Hersteller: Qorvo / UnitedSiC
MOSFET 650V/80mOhm, SiC, CASCODE, G3, D2PAK-3L
MOSFET 650V/80mOhm, SiC, CASCODE, G3, D2PAK-3L
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.26 EUR |
| 25+ | 15.58 EUR |
| 250+ | 12.92 EUR |
| 800+ | 10.31 EUR |
| 2400+ | 10.28 EUR |
| UJ3C065080B3 |
|
Hersteller: onsemi
SiC MOSFETs 650V/80MOSICFETG3TO263-3
SiC MOSFETs 650V/80MOSICFETG3TO263-3
auf Bestellung 467 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.28 EUR |
| 10+ | 13.28 EUR |
| 100+ | 11.13 EUR |
| 500+ | 11.1 EUR |
| 800+ | 10.36 EUR |