| Anzahl | Preis |
|---|---|
| 1+ | 26.38 EUR |
| 25+ | 22.92 EUR |
| 100+ | 19.78 EUR |
| 250+ | 18.22 EUR |
| 600+ | 17.65 EUR |
| 3000+ | 17.64 EUR |
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Technische Details UJ3C120070K4S Qorvo
Description: 1200V/70MOHM, N-OFF SIC CASCODE,, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 12V, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 6V @ 10mA, Power Dissipation (Max): 254.2W (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V, Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Weitere Produktangebote UJ3C120070K4S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| UJ3C120070K4S | onsemi |
 Description: 1200V/70MOHM, N-OFF SIC CASCODE,Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 254.2W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
| UJ3C120070K4S |
|
Hersteller: onsemi
Description: 1200V/70MOHM, N-OFF SIC CASCODE,
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: 1200V/70MOHM, N-OFF SIC CASCODE,
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH