auf Bestellung 1284 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 12.99 EUR |
| 25+ | 11.46 EUR |
| 100+ | 9.94 EUR |
| 250+ | 8.4 EUR |
| 500+ | 7.97 EUR |
| 2400+ | 7.8 EUR |
| 4800+ | 7.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details UJ4C075060B7S Qorvo
Description: 750V/60MOHM, N-OFF SIC CASCODE,, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Cascode SiCJFET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc), Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V, Power Dissipation (Max): 128W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V.
Weitere Produktangebote UJ4C075060B7S nach Preis ab 9.24 EUR bis 15.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
UJ4C075060B7S | Hersteller : UnitedSiC |
 Description: 750V/60MOHM, N-OFF SIC CASCODE,Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V |
auf Bestellung 722 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
UJ4C075060B7S | Hersteller : Qorvo / UnitedSiC |
JFET |
auf Bestellung 512 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
UJ4C075060B7S | Hersteller : QORVO |
Description: QORVO - UJ4C075060B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 25.8 A, 750 V, 58 mohm, D2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 25.8A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 128W Bauform - Transistor: D2PAK Anzahl der Pins: 7Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 58mohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 578 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
|
UJ4C075060B7S | Hersteller : UnitedSiC |
Description: 750V/60MOHM, N-OFF SIC CASCODE, Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V |
Produkt ist nicht verfügbar |