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UJ4C075060L8S

UJ4C075060L8S onsemi

UJ4C075060L8S-D.PDF Hersteller: onsemi
Description: 750V/60MO,SICFET,G4,TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+7.56 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details UJ4C075060L8S onsemi

Description: 750V/60MO,SICFET,G4,TOLL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc), Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V, Power Dissipation (Max): 155W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V.

Weitere Produktangebote UJ4C075060L8S nach Preis ab 8.1 EUR bis 16.07 EUR

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UJ4C075060L8S UJ4C075060L8S Hersteller : Qorvo UJ4C075060L8S_Data_Sheet-3402399.pdf SiC MOSFETs UJ4C075060L8S
auf Bestellung 1698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.06 EUR
25+11.35 EUR
100+9.79 EUR
250+9.01 EUR
500+8.4 EUR
1000+8.11 EUR
6000+8.1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ4C075060L8S UJ4C075060L8S Hersteller : onsemi UJ4C075060L8S-D.PDF Description: 750V/60MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.07 EUR
10+11.09 EUR
100+9.25 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
UJ4C075060L8S UJ4C075060L8S Hersteller : onsemi UJ4C075060L8S-D.PDF SiC MOSFETs 750V/60MOSICFETG4TOLL
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