UJ4C075060L8S onsemi
Hersteller: onsemi
Description: 750V/60MO,SICFET,G4,TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
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Technische Details UJ4C075060L8S onsemi
Description: 750V/60MO,SICFET,G4,TOLL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc), Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V, Power Dissipation (Max): 155W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V.
Weitere Produktangebote UJ4C075060L8S nach Preis ab 9.64 EUR bis 19.12 EUR
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UJ4C075060L8S | Qorvo |
SiC MOSFETs UJ4C075060L8S |
auf Bestellung 1698 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ4C075060L8S | onsemi |
Description: 750V/60MO,SICFET,G4,TOLL Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| UJ4C075060L8S |
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Hersteller: Qorvo
SiC MOSFETs UJ4C075060L8S
SiC MOSFETs UJ4C075060L8S
auf Bestellung 1698 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.54 EUR |
| 25+ | 13.51 EUR |
| 100+ | 11.65 EUR |
| 250+ | 10.72 EUR |
| 500+ | 10 EUR |
| 1000+ | 9.65 EUR |
| 6000+ | 9.64 EUR |
| UJ4C075060L8S |
|
Hersteller: onsemi
Description: 750V/60MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
Description: 750V/60MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.12 EUR |
| 10+ | 13.2 EUR |
| 100+ | 11.01 EUR |