ULN2004APG,C,N Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR RELAY 7NPN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 7 NPN Darlington
Operating Temperature: -40°C ~ 85°C (TA)
Power - Max: 1.47W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Supplier Device Package: 16-DIP
Part Status: Obsolete
Description: IC PWR RELAY 7NPN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 7 NPN Darlington
Operating Temperature: -40°C ~ 85°C (TA)
Power - Max: 1.47W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Supplier Device Package: 16-DIP
Part Status: Obsolete
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Technische Details ULN2004APG,C,N Toshiba Semiconductor and Storage
Description: IC PWR RELAY 7NPN 1:1 16DIP, Packaging: Tube, Package / Case: 16-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Transistor Type: 7 NPN Darlington, Operating Temperature: -40°C ~ 85°C (TA), Power - Max: 1.47W, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V, Supplier Device Package: 16-DIP, Part Status: Obsolete.