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ULN2803APG,CN

ULN2803APG,CN Toshiba


19698395254807981969837969716738uln2804apg_datasheet_en_20121126.pdf.pdf Hersteller: Toshiba
Trans Darlington NPN 50V 0.5A 1470mW 18-Pin PDIP
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Technische Details ULN2803APG,CN Toshiba

Description: TRANS 8NPN DARL 50V 0.5A 18DIP, Packaging: Tube, Package / Case: 18-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Transistor Type: 8 NPN Darlington, Operating Temperature: -40°C ~ 85°C (TA), Power - Max: 1.47W, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V, Supplier Device Package: 18-DIP, Part Status: Obsolete.

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ULN2803APG,CN ULN2803APG,CN Hersteller : Toshiba 19698395254807981969837969716738uln2804apg_datasheet_en_20121126.pdf.pdf Trans Darlington NPN 50V 0.5A 1470mW 18-Pin PDIP
Produkt ist nicht verfügbar
ULN2803APG,CN ULN2803APG,CN Hersteller : Toshiba Semiconductor and Storage ULN2803-04APG_AFWG_11-26-12.pdf Description: TRANS 8NPN DARL 50V 0.5A 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 8 NPN Darlington
Operating Temperature: -40°C ~ 85°C (TA)
Power - Max: 1.47W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Supplier Device Package: 18-DIP
Part Status: Obsolete
Produkt ist nicht verfügbar