UM6J1NTN Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2P-CH 30V 0.2A UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT6
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.25 EUR |
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Technische Details UM6J1NTN Rohm Semiconductor
Description: MOSFET 2P-CH 30V 0.2A UMT6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 200mA, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: UMT6.
Weitere Produktangebote UM6J1NTN nach Preis ab 0.19 EUR bis 1.11 EUR
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UM6J1NTN | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH Si 30V 0.2A 6-Pin UMT T/R |
auf Bestellung 5901 Stücke: Lieferzeit 14-21 Tag (e) |
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UM6J1NTN | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH Si 30V 0.2A 6-Pin UMT T/R |
auf Bestellung 1944 Stücke: Lieferzeit 14-21 Tag (e) |
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UM6J1NTN | Hersteller : Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 0.2A UMT6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: UMT6 |
auf Bestellung 18857 Stücke: Lieferzeit 10-14 Tag (e) |
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UM6J1NTN | Hersteller : ROHM Semiconductor |
MOSFET TRANS MOSFET PCH 30V 0.2A 6PIN |
auf Bestellung 16101 Stücke: Lieferzeit 14-28 Tag (e) |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| UM6J1NTN | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.2A Pulsed drain current: -400mA Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| UM6J1NTN | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.2A Pulsed drain current: -400mA Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |