UM6K33NTN Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 50V 0.2A UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
Description: MOSFET 2N-CH 50V 0.2A UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
auf Bestellung 837000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.093 EUR |
6000+ | 0.091 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details UM6K33NTN Rohm Semiconductor
Description: ROHM - UM6K33NTN - Dual-MOSFET, n-Kanal, 50 V, 50 V, 200 mA, 200 mA, 1.6 ohm, tariffCode: 85412100, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 200mA, hazardous: false, rohsPhthalatesCompliant: YES, Drain-Source-Spannung Vds, p-Kanal: 50V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 200mA, Drain-Source-Durchgangswiderstand, p-Kanal: 1.6ohm, Verlustleistung, p-Kanal: 150mW, Drain-Source-Spannung Vds, n-Kanal: 50V, euEccn: NLR, Anzahl der Pins: 6Pin(s), Drain-Source-Durchgangswiderstand, n-Kanal: 1.6ohm, productTraceability: Yes-Date/Lot Code, Verlustleistung, n-Kanal: 150mW, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote UM6K33NTN nach Preis ab 0.1 EUR bis 0.61 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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UM6K33NTN | Hersteller : Rohm Semiconductor | Trans MOSFET N-CH Si 50V 0.2A 6-Pin UMT T/R |
auf Bestellung 44174 Stücke: Lieferzeit 14-21 Tag (e) |
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UM6K33NTN | Hersteller : Rohm Semiconductor | Trans MOSFET N-CH Si 50V 0.2A 6-Pin UMT T/R |
auf Bestellung 2666 Stücke: Lieferzeit 14-21 Tag (e) |
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UM6K33NTN | Hersteller : Rohm Semiconductor | Trans MOSFET N-CH Si 50V 0.2A 6-Pin UMT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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UM6K33NTN | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 50V 0.2A UMT6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 120mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UMT6 Part Status: Active |
auf Bestellung 841056 Stücke: Lieferzeit 10-14 Tag (e) |
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UM6K33NTN | Hersteller : ROHM Semiconductor | MOSFET 1.2V Drive Nch+Nch MOSFET |
auf Bestellung 153628 Stücke: Lieferzeit 10-14 Tag (e) |
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UM6K33NTN | Hersteller : ROHM |
Description: ROHM - UM6K33NTN - Dual-MOSFET, n-Kanal, 50 V, 50 V, 200 mA, 200 mA, 1.6 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 200mA hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 50V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 200mA Drain-Source-Durchgangswiderstand, p-Kanal: 1.6ohm Verlustleistung, p-Kanal: 150mW Drain-Source-Spannung Vds, n-Kanal: 50V euEccn: NLR Anzahl der Pins: 6Pin(s) Drain-Source-Durchgangswiderstand, n-Kanal: 1.6ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 150mW Betriebstemperatur, max.: 150°C |
auf Bestellung 2225 Stücke: Lieferzeit 14-21 Tag (e) |
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UM6K33NTN | Hersteller : ROHM |
Description: ROHM - UM6K33NTN - Dual-MOSFET, n-Kanal, 50 V, 50 V, 200 mA, 200 mA, 1.6 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 200mA hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 50V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 200mA Drain-Source-Durchgangswiderstand, p-Kanal: 1.6ohm Verlustleistung, p-Kanal: 150mW Drain-Source-Spannung Vds, n-Kanal: 50V euEccn: NLR Anzahl der Pins: 6Pin(s) Drain-Source-Durchgangswiderstand, n-Kanal: 1.6ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 150mW Betriebstemperatur, max.: 150°C |
auf Bestellung 2225 Stücke: Lieferzeit 14-21 Tag (e) |
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UM6K33NTN |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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UM6K33NTN | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±8V On-state resistance: 7.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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UM6K33NTN | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±8V On-state resistance: 7.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |