UMC3NT1G ON Semiconductor
auf Bestellung 4875 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1852+ | 0.084 EUR |
2825+ | 0.053 EUR |
3598+ | 0.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details UMC3NT1G ON Semiconductor
Description: TRANS PREBIAS NPN/PNP 50V SC88A, Packaging: Tape & Reel (TR), Package / Case: 5-TSSOP, SC-70-5, SOT-353, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SC-88A (SC-70-5/SOT-353), Part Status: Active.
Weitere Produktangebote UMC3NT1G nach Preis ab 0.037 EUR bis 0.81 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
UMC3NT1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SC88A Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88A (SC-70-5/SOT-353) Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
UMC3NT1G | Hersteller : ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 150mW 5-Pin SC-88A T/R |
auf Bestellung 4875 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
UMC3NT1G | Hersteller : ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 150mW 5-Pin SC-88A T/R |
auf Bestellung 424 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
UMC3NT1G | Hersteller : onsemi | Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP |
auf Bestellung 1218 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
UMC3NT1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SC88A Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88A (SC-70-5/SOT-353) Part Status: Active |
auf Bestellung 6340 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
UMC3NT1G | Hersteller : ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 150mW 5-Pin SC-88A T/R |
auf Bestellung 424 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
UMC3NT1G | Hersteller : ONSEMI |
Description: ONSEMI - UMC3NT1G - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1671450 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
UMC3NT1G | Hersteller : ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 150mW 5-Pin SC-88A T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
UMC3NT1G | Hersteller : ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 150mW 5-Pin SC-88A T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
UMC3NT1G | Hersteller : ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 150mW 5-Pin SC-88A T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
UMC3NT1G | Hersteller : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT; 50V; 0.1A; 0.15W; SOT353 Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT353 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common base-collector Base resistor: 10/10kΩ Base-emitter resistor: 10/10kΩ Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
UMC3NT1G | Hersteller : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT; 50V; 0.1A; 0.15W; SOT353 Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT353 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common base-collector Base resistor: 10/10kΩ Base-emitter resistor: 10/10kΩ |
Produkt ist nicht verfügbar |