UMD22NTR ROHM Semiconductor
auf Bestellung 1586 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.62 EUR |
| 10+ | 0.50 EUR |
| 100+ | 0.31 EUR |
| 1000+ | 0.20 EUR |
| 3000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
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Technische Details UMD22NTR ROHM Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W UMT6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: UMT6.
Weitere Produktangebote UMD22NTR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| UMD22-N-TR |
auf Bestellung 150000 Stücke: Lieferzeit 21-28 Tag (e) |
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| UMD22NTR |
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auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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UMD22NTR | Hersteller : Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W UMT6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: UMT6 |
Produkt ist nicht verfügbar |
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UMD22NTR | Hersteller : Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W UMT6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: UMT6 |
Produkt ist nicht verfügbar |