UMD6NFHATR ROHM Semiconductor
Hersteller: ROHM SemiconductorBipolar Transistors - BJT NPN+PNP, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor)
auf Bestellung 1284 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.7 EUR |
| 10+ | 0.42 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.11 EUR |
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Technische Details UMD6NFHATR ROHM Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V UMT6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: UMT6, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote UMD6NFHATR
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UMD6NFHATR | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V UMT6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: UMT6 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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UMD6NFHATR | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V UMT6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: UMT6 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |