Produkte > ROHM SEMICONDUCTOR > UMH33NTN
UMH33NTN

UMH33NTN ROHM Semiconductor

umh33n-e.pdf Hersteller: ROHM Semiconductor
Digital Transistors TRANSISTOR
auf Bestellung 5947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.85 EUR
10+ 0.73 EUR
100+ 0.55 EUR
500+ 0.43 EUR
1000+ 0.35 EUR
3000+ 0.29 EUR
Mindestbestellmenge: 4
Produktrezensionen
Produktbewertung abgeben

Technische Details UMH33NTN ROHM Semiconductor

Description: NPN+NPN, SOT-363, DUAL DIGITAL T, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 400mA, Voltage - Collector Emitter Breakdown (Max): 20V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V, Frequency - Transition: 35MHz, Resistor - Base (R1): 2.2kOhms, Supplier Device Package: UMT6.

Weitere Produktangebote UMH33NTN nach Preis ab 0.35 EUR bis 0.92 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
UMH33NTN UMH33NTN Hersteller : Rohm Semiconductor umh33n-e.pdf Description: NPN+NPN, SOT-363, DUAL DIGITAL T
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Frequency - Transition: 35MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: UMT6
auf Bestellung 2655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.92 EUR
23+ 0.78 EUR
100+ 0.55 EUR
500+ 0.43 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 20
UMH33NTN UMH33NTN Hersteller : Rohm Semiconductor umh33n-e.pdf Description: NPN+NPN, SOT-363, DUAL DIGITAL T
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
Frequency - Transition: 35MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: UMT6
Produkt ist nicht verfügbar