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UMT1NFHATN

UMT1NFHATN Rohm Semiconductor

datasheet?p=UMT1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP DUAL 50V 150MA UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.2 EUR
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Technische Details UMT1NFHATN Rohm Semiconductor

Description: TRANS 2PNP DUAL 50V 150MA UMT6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 150mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Frequency - Transition: 140MHz, Supplier Device Package: UMT6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

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UMT1NFHATN UMT1NFHATN ROHM Semiconductor umt1nfha_e-1872305.pdf Bipolar Transistors - BJT PNP+PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101)
auf Bestellung 11210 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.89 EUR
10+0.51 EUR
100+0.27 EUR
1000+0.23 EUR
3000+0.18 EUR
9000+0.17 EUR
45000+0.14 EUR
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UMT1NFHATN UMT1NFHATN Rohm Semiconductor datasheet?p=UMT1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2PNP DUAL 50V 150MA UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4721 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
37+0.58 EUR
100+0.37 EUR
500+0.27 EUR
1000+0.25 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UMT1NFHATN umt1nfha_e-1872305.pdf
UMT1NFHATN
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT PNP+PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101)
auf Bestellung 11210 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+0.89 EUR
10+0.51 EUR
100+0.27 EUR
1000+0.23 EUR
3000+0.18 EUR
9000+0.17 EUR
45000+0.14 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UMT1NFHATN datasheet?p=UMT1NFHA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMT1NFHATN
Hersteller: Rohm Semiconductor
Description: TRANS 2PNP DUAL 50V 150MA UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4721 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
37+0.58 EUR
100+0.37 EUR
500+0.27 EUR
1000+0.25 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH