UNR42100RA Panasonic Electronic Components
Hersteller: Panasonic Electronic ComponentsDescription: TRANS PREBIAS NPN 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: NS-B1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
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Technische Details UNR42100RA Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1, Packaging: Tape & Box (TB), Package / Case: 3-SIP, Mounting Type: Through Hole, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Supplier Device Package: NS-B1, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 300 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 47 kOhms.
Weitere Produktangebote UNR42100RA
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UNR42100RA | Hersteller : Panasonic Electronic Components |
Description: TRANS PREBIAS NPN 300MW NS-B1 Packaging: Cut Tape (CT) Package / Case: 3-SIP Mounting Type: Through Hole Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: NS-B1 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 47 kOhms |
Produkt ist nicht verfügbar |