UPA1740TP-E1-AZ Renesas

Description: UPA1740TP-E1-AZ - MOS FIELD EFFE
Packaging: Bulk
Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 3.5A, 10V
Power Dissipation (Max): 1W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 10 V
auf Bestellung 282500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
174+ | 2.90 EUR |
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Technische Details UPA1740TP-E1-AZ Renesas
Description: UPA1740TP-E1-AZ - MOS FIELD EFFE, Packaging: Bulk, Package / Case: 8-PowerSOIC (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 3.5A, 10V, Power Dissipation (Max): 1W (Ta), 22W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 10 V.
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