UPA1814GR-9JG-E1-A Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET P-CH 30V 8-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSSOP
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details UPA1814GR-9JG-E1-A Renesas Electronics Corporation
Description: MOSFET P-CH 30V 8-TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 3.5A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-TSSOP, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V.