UPA1857GR-9JG-E1-A

UPA1857GR-9JG-E1-A Renesas Electronics Corporation


upa1857-data-sheet-g15060ej2v0ds00 Hersteller: Renesas Electronics Corporation
Description: MOSFET 2N-CH 60V 3.8A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSSOP
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Technische Details UPA1857GR-9JG-E1-A Renesas Electronics Corporation

Description: MOSFET 2N-CH 60V 3.8A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 10V, Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-TSSOP.