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UPA1902TE-T1-AT Renesas

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Hersteller: Renesas
Description: UPA1902TE-T1-AT - N-CHANNEL MOS
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-95
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-95
Packaging: Bulk
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Technische Details UPA1902TE-T1-AT Renesas

Description: UPA1902TE-T1-AT - N-CHANNEL MOS, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SC-95, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 200mW (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SC-95, Packaging: Bulk.