Produkte > RENESAS ELECTRONICS CORPORATION > UPA1919TE-T1-AT

UPA1919TE-T1-AT Renesas Electronics Corporation

upa1919-data-sheet-g16298ej2v0ds00 Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 20V SC-95
Packaging: Tape & Reel (TR)
Package / Case: SC-95
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SC-95
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
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Technische Details UPA1919TE-T1-AT Renesas Electronics Corporation

Description: MOSFET P-CH 20V SC-95, Packaging: Tape & Reel (TR), Package / Case: SC-95, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: SC-95, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V.