UPA2521T1H-T2-AT Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 8A 8VSOF
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-VSOF
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Bulk
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Technische Details UPA2521T1H-T2-AT Renesas Electronics Corporation
Description: MOSFET N-CH 30V 8A 8VSOF, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: 8-VSOF, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Bulk.