UPA2702TP-E2-AZ Renesas

Description: UPA2702 - N CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 10V
Power Dissipation (Max): 3W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
172+ | 2.86 EUR |
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Technische Details UPA2702TP-E2-AZ Renesas
Description: UPA2702 - N CHANNEL MOSFET, Packaging: Bulk, Package / Case: 8-PowerSOIC (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 10V, Power Dissipation (Max): 3W (Ta), 22W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V.
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auf Bestellung 100000 Stücke: Lieferzeit 21-28 Tag (e) |