UPA2739T1A-E2-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 30V 85A 8HVSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 23A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-HVSON (5x5.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6050 pF @ 10 V
Description: MOSFET P-CH 30V 85A 8HVSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 23A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-HVSON (5x5.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6050 pF @ 10 V
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Technische Details UPA2739T1A-E2-AY Renesas Electronics Corporation
Description: MOSFET P-CH 30V 85A 8HVSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Ta), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 23A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Supplier Device Package: 8-HVSON (5x5.4), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6050 pF @ 10 V.
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Preis ohne MwSt |
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UPA2739T1A-E2-AY | Hersteller : Renesas Electronics |
 MOSFET MOSFET |
Produkt ist nicht verfügbar |