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UPA2782GR-E1-A Renesas


g16421ej1v0ds00.pdf
Hersteller: Renesas
Description: UPA2782GR-E1-A - SWITCHINGN-CHAN
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Bulk
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
181+3.06 EUR
Mindestbestellmenge: 181 Stücke
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Technische Details UPA2782GR-E1-A Renesas

Description: UPA2782GR-E1-A - SWITCHINGN-CHAN, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.173", 4.40mm Width), Packaging: Bulk.

Weitere Produktangebote UPA2782GR-E1-A

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
UPA2782GR-E1-A NEC g16421ej1v0ds00.pdf 2004
auf Bestellung 1420 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
UPA2782GR-E1-A g16421ej1v0ds00.pdf
Hersteller: NEC
2004
auf Bestellung 1420 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH