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UPA2782GR-E1-A Renesas

g16421ej1v0ds00.pdf Hersteller: Renesas
Description: UPA2782GR-E1-A - SWITCHINGN-CHAN
Packaging: Bulk
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
181+2.57 EUR
Mindestbestellmenge: 181
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Technische Details UPA2782GR-E1-A Renesas

Description: UPA2782GR-E1-A - SWITCHINGN-CHAN, Packaging: Bulk, Package / Case: 8-SOIC (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V.

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UPA2782GR-E1-A Hersteller : NEC g16421ej1v0ds00.pdf 2004
auf Bestellung 1420 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH