UPA2812T1L-E2-AT Renesas Electronics America Inc

Description: MOSFET P-CH 30V 30A 8HWSON, Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-HWSON (3.3x3.3), Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).