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UPA2814T1S-E2-AT

UPA2814T1S-E2-AT Renesas Electronics Corporation

upa2814t1s-datasheet?language=en Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 30V 24A 8HWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 24A, 5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.86 EUR
10000+0.85 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details UPA2814T1S-E2-AT Renesas Electronics Corporation

Description: MOSFET P-CH 30V 24A 8HWSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 24A, 5V, Power Dissipation (Max): 1.5W (Ta), Supplier Device Package: 8-HWSON (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V.

Weitere Produktangebote UPA2814T1S-E2-AT nach Preis ab 0.94 EUR bis 3.24 EUR

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UPA2814T1S-E2-AT UPA2814T1S-E2-AT Hersteller : Renesas Electronics Corporation upa2814t1s-datasheet?language=en Description: MOSFET P-CH 30V 24A 8HWSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 24A, 5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.24 EUR
10+2.07 EUR
100+1.40 EUR
500+1.11 EUR
1000+1.02 EUR
2000+0.94 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
UPA2814T1S-E2-AT UPA2814T1S-E2-AT Hersteller : Renesas Electronics r07ds0776ej0101_pomosfet-1093096.pdf MOSFET MOSFET
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