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UPA3753GR-E1-AX

UPA3753GR-E1-AX Renesas Electronics Corporation

upa3753gr-data-sheet Hersteller: Renesas Electronics Corporation
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.12W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
Supplier Device Package: 8-SOP
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.16 EUR
5000+1.14 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details UPA3753GR-E1-AX Renesas Electronics Corporation

Description: MOSFET 2N-CH 60V 5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.12W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V, Rds On (Max) @ Id, Vgs: 56mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V, Supplier Device Package: 8-SOP.

Weitere Produktangebote UPA3753GR-E1-AX nach Preis ab 1.15 EUR bis 4.05 EUR

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UPA3753GR-E1-AX UPA3753GR-E1-AX Hersteller : Renesas Electronics REN_r07ds1322ej0100_pomosfet_DST_20160125-2508828.pdf MOSFET POWER TRANSISTOR MOSFET
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.64 EUR
10+2.20 EUR
100+1.75 EUR
250+1.61 EUR
500+1.46 EUR
1000+1.25 EUR
2500+1.15 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
UPA3753GR-E1-AX UPA3753GR-E1-AX Hersteller : Renesas Electronics Corporation upa3753gr-data-sheet Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.12W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
Supplier Device Package: 8-SOP
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.05 EUR
10+2.60 EUR
100+1.77 EUR
500+1.42 EUR
1000+1.31 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH