US1B-E3/5AT Vishay General Semiconductor
auf Bestellung 12760 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 0.39 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.17 EUR |
| 1000+ | 0.12 EUR |
| 2500+ | 0.1 EUR |
| 7500+ | 0.093 EUR |
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Technische Details US1B-E3/5AT Vishay General Semiconductor
Description: DIODE GEN PURP 100V 1A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Weitere Produktangebote US1B-E3/5AT nach Preis ab 0.23 EUR bis 0.95 EUR
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US1B-E3/5AT | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 100V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
auf Bestellung 6039 Stücke: Lieferzeit 10-14 Tag (e) |
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US1B-E3/5AT | Hersteller : Vishay |
Diode Switching 100V 1A 2-Pin SMA T/R |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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US1B-E3/5AT | Hersteller : Vishay |
Diode Switching 100V 1A 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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US1B-E3/5AT | Hersteller : Vishay |
Diode Switching 100V 1A 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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US1B-E3/5AT | Hersteller : Vishay |
Diode Switching 100V 1A 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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US1B-E3/5AT | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |