US6J11TR

US6J11TR Rohm Semiconductor


datasheet?p=US6J11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 1.3A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.35 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details US6J11TR Rohm Semiconductor

Description: MOSFET 2P-CH 12V 1.3A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 1.3A, Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V, Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TUMT6, Part Status: Active.

Weitere Produktangebote US6J11TR nach Preis ab 0.31 EUR bis 1.05 EUR

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US6J11TR US6J11TR Hersteller : Rohm Semiconductor datasheet?p=US6J11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 12V 1.3A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 5885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
20+0.88 EUR
100+0.61 EUR
500+0.48 EUR
1000+0.39 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
US6J11TR US6J11TR Hersteller : ROHM Semiconductor datasheet?p=US6J11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET TRANS MOSFET PCH 12V 1.3A 6PIN
auf Bestellung 13567 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.05 EUR
10+0.83 EUR
100+0.62 EUR
500+0.49 EUR
1000+0.40 EUR
3000+0.31 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
US6J11TR datasheet?p=US6J11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH