US6J11TR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 1.3A TUMT6
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
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Technische Details US6J11TR Rohm Semiconductor
Description: MOSFET 2P-CH 12V 1.3A TUMT6, Power - Max: 320mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: TUMT6, Vgs(th) (Max) @ Id: 1V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 1.3A, Drain to Source Voltage (Vdss): 12V.
Weitere Produktangebote US6J11TR nach Preis ab 0.38 EUR bis 1.8 EUR
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US6J11TR | Rohm Semiconductor |
Description: MOSFET 2P-CH 12V 1.3A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.3A Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT6 Part Status: Active |
auf Bestellung 5885 Stücke: Lieferzeit 10-14 Tag (e) |
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US6J11TR | ROHM Semiconductor |
MOSFETs TRANS MOSFET PCH 12V 1.3A 6PIN |
auf Bestellung 7008 Stücke: Lieferzeit 10-14 Tag (e) |
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| US6J11TR |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| US6J11TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 1.3A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Description: MOSFET 2P-CH 12V 1.3A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 5885 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 20+ | 1.05 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.46 EUR |
| US6J11TR |
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Hersteller: ROHM Semiconductor
MOSFETs TRANS MOSFET PCH 12V 1.3A 6PIN
MOSFETs TRANS MOSFET PCH 12V 1.3A 6PIN
auf Bestellung 7008 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.8 EUR |
| 10+ | 1.12 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.4 EUR |
| 6000+ | 0.38 EUR |