
US6J12TCR ROHM Semiconductor

MOSFET 1.5V Drive Pch+Pch MOSFET. US6J12 is low on-resistance MOSFET, suitable for switching application.
auf Bestellung 1307 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 1 EUR |
10+ | 0.85 EUR |
100+ | 0.59 EUR |
500+ | 0.49 EUR |
1000+ | 0.42 EUR |
3000+ | 0.36 EUR |
6000+ | 0.34 EUR |
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Technische Details US6J12TCR ROHM Semiconductor
Description: MOSFET 2P-CH 12V 2A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 910mW (Ta), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V, Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TUMT6.
Weitere Produktangebote US6J12TCR nach Preis ab 0.47 EUR bis 1.65 EUR
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US6J12TCR | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 910mW (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT6 |
auf Bestellung 2738 Stücke: Lieferzeit 10-14 Tag (e) |
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US6J12TCR | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 910mW (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT6 |
Produkt ist nicht verfügbar |