US6J12TCR ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFET 1.5V Drive Pch+Pch MOSFET. US6J12 is low on-resistance MOSFET, suitable for switching application.
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.19 EUR |
| 10+ | 1.01 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.43 EUR |
| 6000+ | 0.4 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details US6J12TCR ROHM Semiconductor
Description: MOSFET 2P-CH 12V 2A TUMT6, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR), Supplier Device Package: TUMT6, Vgs(th) (Max) @ Id: 1V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Drain to Source Voltage (Vdss): 12V, Power - Max: 910mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 P-Channel (Dual).
Weitere Produktangebote US6J12TCR nach Preis ab 0.56 EUR bis 1.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
US6J12TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 12V 2A TUMT6 Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drain to Source Voltage (Vdss): 12V Power - Max: 910mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 2738 Stücke: Lieferzeit 10-14 Tag (e) |
|
| US6J12TCR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 2A TUMT6
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 12V
Power - Max: 910mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 12V 2A TUMT6
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 12V
Power - Max: 910mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 2738 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.96 EUR |
| 18+ | 1.23 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.56 EUR |