Technische Details US6K1TR Rohm Semiconductor
Description: ROHM - US6K1TR - Dual-MOSFET, n-Kanal, 30 V, 1.5 A, 0.24 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: -, MSL: -, Dauer-Drainstrom Id, n-Kanal: 1.5A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 30V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TUMT, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.24ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 1W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote US6K1TR nach Preis ab 0.23 EUR bis 2.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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US6K1TR | Rohm Semiconductor |
 Trans MOSFET N-CH Si 30V 1.5A 6-Pin TUMT T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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US6K1TR | Rohm Semiconductor |
Trans MOSFET N-CH Si 30V 1.5A 6-Pin TUMT T/R |
auf Bestellung 55295 Stücke: Lieferzeit 14-21 Tag (e) |
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US6K1TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 1.5A TUMT6 Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 1.5V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Current - Continuous Drain (Id) @ 25°C: 1.5A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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US6K1TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 1.5A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT6 |
auf Bestellung 24843 Stücke: Lieferzeit 10-14 Tag (e) |
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US6K1TR | ROHM Semiconductor |
MOSFETs 2N-CH 30V 1.5A |
auf Bestellung 17436 Stücke: Lieferzeit 10-14 Tag (e) |
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US6K1TR | ROHM |
Description: ROHM - US6K1TR - Dual-MOSFET, n-Kanal, 30 V, 1.5 A, 0.24 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: - MSL: - Dauer-Drainstrom Id, n-Kanal: 1.5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TUMT Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.24ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1W Betriebstemperatur, max.: 150°C |
auf Bestellung 2668 Stücke: Lieferzeit 14-21 Tag (e) |
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| US6K1TR |
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auf Bestellung 105 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| US6K1TR |
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Hersteller: Rohm Semiconductor
Trans MOSFET N-CH Si 30V 1.5A 6-Pin TUMT T/R
Trans MOSFET N-CH Si 30V 1.5A 6-Pin TUMT T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 423+ | 0.42 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.37 EUR |
| 2500+ | 0.36 EUR |
| US6K1TR |
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Hersteller: Rohm Semiconductor
Trans MOSFET N-CH Si 30V 1.5A 6-Pin TUMT T/R
Trans MOSFET N-CH Si 30V 1.5A 6-Pin TUMT T/R
auf Bestellung 55295 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 411+ | 0.43 EUR |
| 413+ | 0.42 EUR |
| 507+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.29 EUR |
| 6000+ | 0.26 EUR |
| 12000+ | 0.24 EUR |
| 24000+ | 0.23 EUR |
| US6K1TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 1.5A TUMT6
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 1.5A TUMT6
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.43 EUR |
| 6000+ | 0.4 EUR |
| 9000+ | 0.37 EUR |
| US6K1TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Description: MOSFET 2N-CH 30V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
auf Bestellung 24843 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.13 EUR |
| 22+ | 0.96 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.48 EUR |
| US6K1TR |
|
Hersteller: ROHM Semiconductor
MOSFETs 2N-CH 30V 1.5A
MOSFETs 2N-CH 30V 1.5A
auf Bestellung 17436 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.57 EUR |
| 10+ | 0.99 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.39 EUR |
| US6K1TR |
|
Hersteller: ROHM
Description: ROHM - US6K1TR - Dual-MOSFET, n-Kanal, 30 V, 1.5 A, 0.24 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
MSL: -
Dauer-Drainstrom Id, n-Kanal: 1.5A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TUMT
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.24ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1W
Betriebstemperatur, max.: 150°C
Description: ROHM - US6K1TR - Dual-MOSFET, n-Kanal, 30 V, 1.5 A, 0.24 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
MSL: -
Dauer-Drainstrom Id, n-Kanal: 1.5A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TUMT
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.24ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1W
Betriebstemperatur, max.: 150°C
auf Bestellung 2668 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 113+ | 2.21 EUR |
| 182+ | 1.29 EUR |
| 278+ | 0.77 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.54 EUR |