US6K4TR

US6K4TR Rohm Semiconductor


datasheet?p=US6K4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 20V 1.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.54 EUR
Mindestbestellmenge: 3000
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Technische Details US6K4TR Rohm Semiconductor

Description: MOSFET 2N-CH 20V 1.5A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.5A, Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V, Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TUMT6, Part Status: Active.

Weitere Produktangebote US6K4TR nach Preis ab 0.61 EUR bis 1.69 EUR

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US6K4TR US6K4TR Hersteller : Rohm Semiconductor datasheet?p=US6K4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 20V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 6427 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
22+ 1.24 EUR
100+ 0.85 EUR
500+ 0.71 EUR
1000+ 0.61 EUR
Mindestbestellmenge: 19
US6K4TR US6K4TR Hersteller : ROHM Semiconductor us6k4-1873510.pdf MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 1.5A
auf Bestellung 21000 Stücke:
Lieferzeit 178-192 Tag (e)
Anzahl Preis ohne MwSt
31+1.69 EUR
35+ 1.49 EUR
100+ 1.14 EUR
500+ 0.9 EUR
Mindestbestellmenge: 31
US6K4TR Hersteller : ROHM SEMICONDUCTOR datasheet?p=US6K4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; Idm: 3A; 1W; TUMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 3A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±10V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
US6K4TR Hersteller : ROHM SEMICONDUCTOR datasheet?p=US6K4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.5A; Idm: 3A; 1W; TUMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 3A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±10V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar