US6M11TR
Produktcode: 174450
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Weitere Produktangebote US6M11TR nach Preis ab 0.4 EUR bis 1.84 EUR
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US6M11TR | ROHM Semiconductor |
MOSFETs TRANS MOSFET N/P-CH 20V/12V 6PIN |
auf Bestellung 18248 Stücke: Lieferzeit 10-14 Tag (e) |
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US6M11TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 20V/12V 1.5A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V, 12V Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT6 Part Status: Active |
auf Bestellung 1223 Stücke: Lieferzeit 10-14 Tag (e) |
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| US6M11TR |
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Hersteller: ROHM Semiconductor
MOSFETs TRANS MOSFET N/P-CH 20V/12V 6PIN
MOSFETs TRANS MOSFET N/P-CH 20V/12V 6PIN
auf Bestellung 18248 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.8 EUR |
| 10+ | 1.12 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.43 EUR |
| 6000+ | 0.4 EUR |
| US6M11TR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 20V/12V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Description: MOSFET N/P-CH 20V/12V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 1223 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.84 EUR |
| 19+ | 1.14 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.51 EUR |