US6M11TR

US6M11TR Rohm Semiconductor


datasheet?p=US6M11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 20V/12V TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 12000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
Mindestbestellmenge: 3000
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Technische Details US6M11TR Rohm Semiconductor

Description: MOSFET N/P-CH 20V/12V TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, 12V, Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A, Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V, Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TUMT6, Part Status: Active.

Weitere Produktangebote US6M11TR nach Preis ab 0.46 EUR bis 1.52 EUR

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US6M11TR US6M11TR Hersteller : Rohm Semiconductor datasheet?p=US6M11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 20V/12V TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 13750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.04 EUR
100+ 0.77 EUR
500+ 0.6 EUR
1000+ 0.49 EUR
Mindestbestellmenge: 17
US6M11TR US6M11TR Hersteller : ROHM Semiconductor datasheet?p=US6M11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET TRANS MOSFET N/P-CH 20V/12V 6PIN
auf Bestellung 38518 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
35+1.52 EUR
43+ 1.23 EUR
100+ 0.92 EUR
500+ 0.72 EUR
1000+ 0.58 EUR
3000+ 0.46 EUR
Mindestbestellmenge: 35
US6M11TR
Produktcode: 174450
datasheet?p=US6M11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Verschiedene Bauteile > Verschiedene Bauteile 1
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US6M11TR Hersteller : ROHM SEMICONDUCTOR datasheet?p=US6M11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key US6M11TR Multi channel transistors
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