US6M1TR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.4A TUMT6
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
Drain to Source Voltage (Vdss): 30V, 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details US6M1TR Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.4A TUMT6, Part Status: Active, Supplier Device Package: TUMT6, Vgs(th) (Max) @ Id: 2.5V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V, Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A, Drain to Source Voltage (Vdss): 30V, 20V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote US6M1TR nach Preis ab 0.44 EUR bis 2.09 EUR
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US6M1TR | ROHM Semiconductor |
MOSFETs N+P 30 20V 1A |
auf Bestellung 7293 Stücke: Lieferzeit 10-14 Tag (e) |
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US6M1TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V/20V 1.4A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active |
auf Bestellung 11776 Stücke: Lieferzeit 10-14 Tag (e) |
|
| US6M1TR |
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Hersteller: ROHM Semiconductor
MOSFETs N+P 30 20V 1A
MOSFETs N+P 30 20V 1A
auf Bestellung 7293 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 1.26 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.57 EUR |
| 3000+ | 0.44 EUR |
| US6M1TR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.4A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Description: MOSFET N/P-CH 30V/20V 1.4A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 11776 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.09 EUR |
| 17+ | 1.31 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.6 EUR |