US6M1TR

US6M1TR Rohm Semiconductor


datasheet?p=US6M1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.4 EUR
6000+ 0.38 EUR
9000+ 0.35 EUR
Mindestbestellmenge: 3000
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Technische Details US6M1TR Rohm Semiconductor

Description: MOSFET N/P-CH 30V/20V TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A, Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V, Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TUMT6, Part Status: Active.

Weitere Produktangebote US6M1TR nach Preis ab 0.36 EUR bis 1.05 EUR

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US6M1TR US6M1TR Hersteller : Rohm Semiconductor datasheet?p=US6M1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V/20V TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 11980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.04 EUR
20+ 0.9 EUR
100+ 0.63 EUR
500+ 0.52 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 17
US6M1TR US6M1TR Hersteller : ROHM Semiconductor datasheet?p=US6M1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET N+P 30 20V 1A
auf Bestellung 8156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.05 EUR
10+ 0.92 EUR
100+ 0.64 EUR
500+ 0.53 EUR
1000+ 0.45 EUR
3000+ 0.36 EUR
Mindestbestellmenge: 3
US6M1TR Hersteller : ROHM SEMICONDUCTOR datasheet?p=US6M1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key US6M1TR Multi channel transistors
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