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US6T9TR

US6T9TR ROHM Semiconductor

datasheet?p=US6T9&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT BIPOLAR PNP
auf Bestellung 2980 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
35+1.5 EUR
41+ 1.28 EUR
100+ 0.96 EUR
500+ 0.75 EUR
1000+ 0.58 EUR
3000+ 0.48 EUR
9000+ 0.44 EUR
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Technische Details US6T9TR ROHM Semiconductor

Description: TRANS 2PNP 30V 1A 6UMT, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 400mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 30V, Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V, Frequency - Transition: 320MHz, Supplier Device Package: UMT6.

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US6T9TR US6T9TR Hersteller : Rohm Semiconductor datasheet?p=US6T9&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2PNP 30V 1A 6UMT
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: UMT6
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