Technische Details US6X8TR Rohm Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 400mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 30V, Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V, Frequency - Transition: 320MHz, Supplier Device Package: TUMT6.
Weitere Produktangebote US6X8TR nach Preis ab 0.42 EUR bis 1.51 EUR
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US6X8TR | Rohm Semiconductor |
 Description: NPN+NPN DRIVER TRANSISTORPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: TUMT6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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US6X8TR | Rohm Semiconductor |
Description: NPN+NPN DRIVER TRANSISTOR Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 320MHz Supplier Device Package: TUMT6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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US6X8TR | ROHM Semiconductor |
Bipolar Transistors - BJT NPN+NPN 30VCEO 1A SOT-363T |
auf Bestellung 2504 Stücke: Lieferzeit 10-14 Tag (e) |
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| US6X8TR |
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Hersteller: Rohm Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TUMT6
Description: NPN+NPN DRIVER TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TUMT6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.42 EUR |
| US6X8TR |
|
Hersteller: Rohm Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TUMT6
Description: NPN+NPN DRIVER TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TUMT6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.11 EUR |
| 23+ | 0.95 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.46 EUR |
| US6X8TR |
|
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT NPN+NPN 30VCEO 1A SOT-363T
Bipolar Transistors - BJT NPN+NPN 30VCEO 1A SOT-363T
auf Bestellung 2504 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.51 EUR |
| 10+ | 1.12 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.52 EUR |
| 3000+ | 0.44 EUR |
| 6000+ | 0.42 EUR |