US6X8TR

US6X8TR Rohm Semiconductor


us6x8tr-e.pdf Hersteller: Rohm Semiconductor
Trans GP BJT NPN 30V 1A 1000mW 6-Pin TUMT T/R
auf Bestellung 3000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
623+0.25 EUR
Mindestbestellmenge: 623
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Technische Details US6X8TR Rohm Semiconductor

Description: NPN+NPN DRIVER TRANSISTOR, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 400mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 30V, Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V, Frequency - Transition: 320MHz, Supplier Device Package: TUMT6.

Weitere Produktangebote US6X8TR nach Preis ab 0.33 EUR bis 0.93 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
US6X8TR US6X8TR Hersteller : Rohm Semiconductor datasheet?p=US6X8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN DRIVER TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TUMT6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
Mindestbestellmenge: 3000
US6X8TR US6X8TR Hersteller : Rohm Semiconductor datasheet?p=US6X8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN DRIVER TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TUMT6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.92 EUR
23+ 0.79 EUR
100+ 0.55 EUR
500+ 0.46 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 20
US6X8TR US6X8TR Hersteller : ROHM Semiconductor datasheet?p=US6X8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Bipolar Transistors - BJT NPN+NPN 30VCEO 1A SOT-363T
auf Bestellung 2534 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.93 EUR
10+ 0.81 EUR
100+ 0.56 EUR
500+ 0.47 EUR
1000+ 0.4 EUR
3000+ 0.35 EUR
6000+ 0.33 EUR
Mindestbestellmenge: 4