UT6J3TCR

UT6J3TCR Rohm Semiconductor


ut6j3tcr-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 2835 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
19+0.94 EUR
100+0.65 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 16
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Technische Details UT6J3TCR Rohm Semiconductor

Description: MOSFET 2P-CH 20V 3A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V, Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: HUML2020L8, Part Status: Active.

Weitere Produktangebote UT6J3TCR nach Preis ab 0.43 EUR bis 1.60 EUR

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UT6J3TCR UT6J3TCR Hersteller : ROHM Semiconductor ut6j3tcr-e.pdf MOSFETs -20V Pch+Pch Si MOSFET
auf Bestellung 2887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.18 EUR
10+1.04 EUR
100+0.72 EUR
500+0.60 EUR
1000+0.51 EUR
3000+0.46 EUR
6000+0.43 EUR
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UT6J3TCR UT6J3TCR Hersteller : Rohm Semiconductor ut6j3tcr-e.pdf Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 1174 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.60 EUR
18+0.99 EUR
100+0.65 EUR
500+0.50 EUR
1000+0.45 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
UT6J3TCR UT6J3TCR Hersteller : Rohm Semiconductor ut6j3tcr-e.pdf Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
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