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UT6J3TCR1

UT6J3TCR1 ROHM Semiconductor

datasheet?p=UT6J3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM Semiconductor
MOSFETs DFN2020 2PCH 20V 3A
auf Bestellung 4820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.97 EUR
10+1.09 EUR
100+0.8 EUR
500+0.67 EUR
1000+0.61 EUR
3000+0.54 EUR
6000+0.5 EUR
Mindestbestellmenge: 2
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Technische Details UT6J3TCR1 ROHM Semiconductor

Description: MOSFET 2P-CH 20V 3A 8DFN, Supplier Device Package: DFN2020-8D, Vgs(th) (Max) @ Id: 1V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote UT6J3TCR1 nach Preis ab 0.65 EUR bis 2.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
UT6J3TCR1 UT6J3TCR1 Hersteller : Rohm Semiconductor datasheet?p=UT6J3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 20V 3A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN2020-8D
auf Bestellung 2939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
13+1.39 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.65 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
UT6J3TCR1 UT6J3TCR1 Hersteller : Rohm Semiconductor datasheet?p=UT6J3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 20V 3A 8DFN
Supplier Device Package: DFN2020-8D
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH