UT6JA2TCR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2P-CH 30V 4A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 5815 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 1.9 EUR |
| 16+ | 1.63 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.8 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details UT6JA2TCR Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V, Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: HUML2020L8, Part Status: Active.
Weitere Produktangebote UT6JA2TCR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
UT6JA2TCR | Hersteller : ROHM Semiconductor |
MOSFET -30V Pch+Pch Si MOSFET |
auf Bestellung 3057 Stücke: Lieferzeit 14-28 Tag (e) |
|
| UT6JA2TCR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -12A; 2W Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 103mΩ Gate-source voltage: ±20V Pulsed drain current: -12A Power dissipation: 2W Gate charge: 6.7nC Polarisation: unipolar Drain current: -4A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET x2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
|
|
UT6JA2TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 4A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
Produkt ist nicht verfügbar |
|
| UT6JA2TCR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -12A; 2W Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 103mΩ Gate-source voltage: ±20V Pulsed drain current: -12A Power dissipation: 2W Gate charge: 6.7nC Polarisation: unipolar Drain current: -4A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET x2 |
Produkt ist nicht verfügbar |