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UT6JE5TCR

UT6JE5TCR Rohm Semiconductor

ut6je5tcr-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 100V 1A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
auf Bestellung 723 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
36+0.49 EUR
40+0.44 EUR
100+0.38 EUR
250+0.35 EUR
500+0.34 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details UT6JE5TCR Rohm Semiconductor

Description: MOSFET 2P-CH 100V 1A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: HUML2020L8.

Weitere Produktangebote UT6JE5TCR nach Preis ab 0.32 EUR bis 0.77 EUR

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UT6JE5TCR UT6JE5TCR Hersteller : ROHM Semiconductor ut6je5tcr-e.pdf MOSFETs -100V 1.0A, Dual Pch+Pch, DFN2020-8D, Power MOSFET
auf Bestellung 3150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.77 EUR
10+0.48 EUR
100+0.41 EUR
250+0.38 EUR
500+0.36 EUR
6000+0.32 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
UT6JE5TCR UT6JE5TCR Hersteller : Rohm Semiconductor ut6je5tcr-e.pdf Description: MOSFET 2P-CH 100V 1A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
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Im Einkaufswagen  Stück im Wert von  UAH