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UT6JE5TCR

UT6JE5TCR ROHM Semiconductor

ut6je5tcr-e.pdf
Hersteller: ROHM Semiconductor
MOSFETs -100V 1.0A, Dual Pch+Pch, DFN2020-8D, Power MOSFET
auf Bestellung 1665 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+1.02 EUR
10+0.63 EUR
100+0.51 EUR
500+0.49 EUR
1000+0.46 EUR
3000+0.37 EUR
6000+0.36 EUR
Mindestbestellmenge: 4 Stücke
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Technische Details UT6JE5TCR ROHM Semiconductor

Description: MOSFET 2P-CH 100V 1A HUML2020L8, Supplier Device Package: HUML2020L8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V, Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Drain to Source Voltage (Vdss): 100V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-PowerUDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote UT6JE5TCR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
UT6JE5TCR UT6JE5TCR Rohm Semiconductor ut6je5tcr-e.pdf Description: MOSFET 2P-CH 100V 1A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UT6JE5TCR UT6JE5TCR Rohm Semiconductor ut6je5tcr-e.pdf Description: MOSFET 2P-CH 100V 1A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Configuration: 2 P-Channel (Dual)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
UT6JE5TCR ut6je5tcr-e.pdf
UT6JE5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 100V 1A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UT6JE5TCR ut6je5tcr-e.pdf
UT6JE5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 100V 1A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Configuration: 2 P-Channel (Dual)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH