UT6K30TCR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2N-CH 60V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V
Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 1918 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.39 EUR |
| 11+ | 1.6 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.81 EUR |
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Technische Details UT6K30TCR Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V, Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V, Vgs(th) (Max) @ Id: 2.7V @ 50µA, Supplier Device Package: HUML2020L8, Part Status: Active.
Weitere Produktangebote UT6K30TCR nach Preis ab 0.87 EUR bis 2.83 EUR
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UT6K30TCR | Hersteller : ROHM Semiconductor |
MOSFETs UT6K30 is low on - resistance and small surface mount package MOSFET. It is suitable for switching application and DC/DC Converter. |
auf Bestellung 582 Stücke: Lieferzeit 10-14 Tag (e) |
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UT6K30TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 3A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 50µA Supplier Device Package: HUML2020L8 Part Status: Active |
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