UT6KE5TCR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.36 EUR |
| 6000+ | 0.33 EUR |
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Technische Details UT6KE5TCR Rohm Semiconductor
Description: MOSFET 2N-CH 100V 2A HUML2020L8, Supplier Device Package: HUML2020L8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Drain to Source Voltage (Vdss): 100V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-PowerUDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote UT6KE5TCR nach Preis ab 0.32 EUR bis 1.5 EUR
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UT6KE5TCR | ROHM Semiconductor |
MOSFETs 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET |
auf Bestellung 14462 Stücke: Lieferzeit 10-14 Tag (e) |
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UT6KE5TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 2A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Configuration: 2 N-Channel (Dual) |
auf Bestellung 6596 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6KE5TCR |
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Hersteller: ROHM Semiconductor
MOSFETs 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET
MOSFETs 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET
auf Bestellung 14462 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 1.41 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.4 EUR |
| 3000+ | 0.34 EUR |
| 6000+ | 0.32 EUR |
| UT6KE5TCR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Configuration: 2 N-Channel (Dual)
Description: MOSFET 2N-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Configuration: 2 N-Channel (Dual)
auf Bestellung 6596 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.5 EUR |
| 19+ | 0.93 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.42 EUR |