UT6KE5TCR ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFETs UT6KE5 is a low on-resistance MOSFET ideal for switching applications and DC-DC Converter. This product includes two 100V MOSFETs in a small surface mount package (DFN2020-8D).
auf Bestellung 5640 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.39 EUR |
| 10+ | 0.96 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.43 EUR |
| 3000+ | 0.35 EUR |
| 9000+ | 0.32 EUR |
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Technische Details UT6KE5TCR ROHM Semiconductor
Description: MOSFET 2N-CH 100V 2A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: HUML2020L8.
Weitere Produktangebote UT6KE5TCR nach Preis ab 0.44 EUR bis 1.57 EUR
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UT6KE5TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 2A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 |
auf Bestellung 2829 Stücke: Lieferzeit 10-14 Tag (e) |
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UT6KE5TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 2A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 |
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