UT6MA2TCR ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFETs UT6MA2 is small surface mount package MOSFET which is suitable for switching application.
auf Bestellung 9996 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.99 EUR |
| 10+ | 0.75 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.34 EUR |
| 3000+ | 0.31 EUR |
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Technische Details UT6MA2TCR ROHM Semiconductor
Description: MOSFET N/P-CH 30V 4A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V, Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: HUML2020L8, Part Status: Active.
Weitere Produktangebote UT6MA2TCR nach Preis ab 0.61 EUR bis 1.09 EUR
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UT6MA2TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 4A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
auf Bestellung 409 Stücke: Lieferzeit 10-14 Tag (e) |
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UT6MA2TCR Produktcode: 184866
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UT6MA2TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 4A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
Produkt ist nicht verfügbar |