UT6MA2TCR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N/P-CH 30V 4A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.35 EUR |
| 6000+ | 0.33 EUR |
| 9000+ | 0.31 EUR |
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Technische Details UT6MA2TCR Rohm Semiconductor
Description: MOSFET N/P-CH 30V 4A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V, Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: HUML2020L8, Part Status: Active.
Weitere Produktangebote UT6MA2TCR nach Preis ab 0.39 EUR bis 1.52 EUR
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UT6MA2TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 4A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
auf Bestellung 32397 Stücke: Lieferzeit 10-14 Tag (e) |
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UT6MA2TCR | Hersteller : ROHM Semiconductor |
MOSFET UT6MA2 is small surface mount package MOSFET which is suitable for switching application. |
auf Bestellung 17554 Stücke: Lieferzeit 14-28 Tag (e) |
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UT6MA2TCR Produktcode: 184866 |
IC > IC andere |
Produkt ist nicht verfügbar
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| UT6MA2TCR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4A; Idm: 12A; 2W Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 80/103mΩ Gate-source voltage: ±20V Pulsed drain current: 12A Power dissipation: 2W Gate charge: 4.3/6.7nC Polarisation: unipolar Drain current: 4A Kind of channel: enhanced Drain-source voltage: 30/-30V Type of transistor: N/P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| UT6MA2TCR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4A; Idm: 12A; 2W Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 80/103mΩ Gate-source voltage: ±20V Pulsed drain current: 12A Power dissipation: 2W Gate charge: 4.3/6.7nC Polarisation: unipolar Drain current: 4A Kind of channel: enhanced Drain-source voltage: 30/-30V Type of transistor: N/P-MOSFET |
Produkt ist nicht verfügbar |