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Weitere Produktangebote UT6MA2TCR nach Preis ab 0.29 EUR bis 1.46 EUR
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UT6MA2TCR | Hersteller : Rohm Semiconductor |
 Description: MOSFET N/P-CH 30V 4A HUML2020L8Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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UT6MA2TCR | Hersteller : ROHM Semiconductor |
MOSFETs 30V Nch+Pch Middle Power MOSFET |
auf Bestellung 1442 Stücke: Lieferzeit 10-14 Tag (e) |
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UT6MA2TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 4A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
auf Bestellung 25548 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MA2TCR | Hersteller : Fairchild/ON Semiconductor |
Транзистор польовий N+P, Udss, В = 30, Id = 4 А, Qg, нКл = 4,3, 6,7, Rds = 46, 70 мОм, Ugs(th) = 2,5, Р, Вт = 2, Тексп, °C = макс. +150, Тип монт. = SMD,... Група товару: Транзистори Корпус: PowerUDFN-6 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 18 Stücke: |