UT6MA3TCR Rohm Semiconductor
auf Bestellung 5950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 364+ | 0.43 EUR |
| 365+ | 0.41 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.34 EUR |
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Technische Details UT6MA3TCR Rohm Semiconductor
Description: MOSFET N/P-CH 20V 5A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A, Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V, Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: HUML2020L8, Part Status: Active.
Weitere Produktangebote UT6MA3TCR nach Preis ab 0.65 EUR bis 2.18 EUR
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UT6MA3TCR | Hersteller : Rohm Semiconductor |
 Description: MOSFET N/P-CH 20V 5A HUML2020L8Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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UT6MA3TCR | Hersteller : Rohm Semiconductor |
Trans MOSFET N/P-CH 20V 5.5A/5A 8-Pin HUML EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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UT6MA3TCR | Hersteller : Rohm Semiconductor |
Trans MOSFET N/P-CH 20V 5.5A/5A 8-Pin HUML EP T/R |
auf Bestellung 2375 Stücke: Lieferzeit 14-21 Tag (e) |
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UT6MA3TCR | Hersteller : ROHM Semiconductor |
MOSFET 20V Nch+Pch Si MOSFET |
auf Bestellung 8734 Stücke: Lieferzeit 14-28 Tag (e) |
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UT6MA3TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 20V 5A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
auf Bestellung 14655 Stücke: Lieferzeit 21-28 Tag (e) |
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| UT6MA3TCR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.5/-5A; Idm: 12A; 2W Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 63/76mΩ Gate-source voltage: ±8V Pulsed drain current: 12A Power dissipation: 2W Gate charge: 4/6.5nC Polarisation: unipolar Drain current: 5.5/-5A Kind of channel: enhanced Drain-source voltage: 20/-20V Type of transistor: N/P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| UT6MA3TCR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.5/-5A; Idm: 12A; 2W Mounting: SMD Kind of package: reel; tape Case: DFN2020D-8 On-state resistance: 63/76mΩ Gate-source voltage: ±8V Pulsed drain current: 12A Power dissipation: 2W Gate charge: 4/6.5nC Polarisation: unipolar Drain current: 5.5/-5A Kind of channel: enhanced Drain-source voltage: 20/-20V Type of transistor: N/P-MOSFET |
Produkt ist nicht verfügbar |