UT6MA3TCR Rohm Semiconductor
auf Bestellung 8481 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 405+ | 0.37 EUR |
| 407+ | 0.35 EUR |
| 516+ | 0.27 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.19 EUR |
| 6000+ | 0.17 EUR |
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Technische Details UT6MA3TCR Rohm Semiconductor
Description: MOSFET N/P-CH 20V 5A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A, Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V, Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: HUML2020L8, Part Status: Active.
Weitere Produktangebote UT6MA3TCR nach Preis ab 0.51 EUR bis 2.16 EUR
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UT6MA3TCR | Hersteller : Rohm Semiconductor |
 Description: MOSFET N/P-CH 20V 5A HUML2020L8Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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UT6MA3TCR | Hersteller : Rohm Semiconductor |
Trans MOSFET N/P-CH 20V 5.5A/5A 8-Pin HUML EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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UT6MA3TCR | Hersteller : Rohm Semiconductor |
Trans MOSFET N/P-CH 20V 5.5A/5A 8-Pin HUML EP T/R |
auf Bestellung 1293 Stücke: Lieferzeit 14-21 Tag (e) |
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UT6MA3TCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 20V 5A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
auf Bestellung 9398 Stücke: Lieferzeit 10-14 Tag (e) |
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UT6MA3TCR | Hersteller : ROHM Semiconductor |
MOSFETs 20V Nch+Pch Si MOSFET |
auf Bestellung 2540 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6MA3TCR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.5/-5A; Idm: 12A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 5.5/-5A Pulsed drain current: 12A Power dissipation: 2W Case: DFN2020D-8 Gate-source voltage: ±8V On-state resistance: 63/76mΩ Mounting: SMD Gate charge: 4/6.5nC Kind of package: reel; tape Kind of channel: enhancement |
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