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UT6ME5TCR

UT6ME5TCR Rohm Semiconductor

ut6me5tcr-e.pdf
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Power - Max: 2W (Ta)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.32 EUR
6000+0.31 EUR
9000+0.3 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details UT6ME5TCR Rohm Semiconductor

Description: MOSFET N/P-CH 100V 2A HUML2020L8, Supplier Device Package: HUML2020L8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V, Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-PowerUDFN, Packaging: Tape & Reel (TR), Power - Max: 2W (Ta).

Weitere Produktangebote UT6ME5TCR nach Preis ab 0.31 EUR bis 0.72 EUR

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UT6ME5TCR UT6ME5TCR ROHM Semiconductor ut6me5tcr-e.pdf MOSFETs DFN 100V 2A DUAL CH
auf Bestellung 15683 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.71 EUR
10+0.45 EUR
100+0.36 EUR
500+0.34 EUR
1000+0.33 EUR
3000+0.31 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
UT6ME5TCR UT6ME5TCR Rohm Semiconductor ut6me5tcr-e.pdf Description: MOSFET N/P-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
auf Bestellung 11979 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
35+0.51 EUR
39+0.45 EUR
100+0.39 EUR
250+0.36 EUR
500+0.35 EUR
1000+0.33 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
UT6ME5TCR ut6me5tcr-e.pdf
UT6ME5TCR
Hersteller: ROHM Semiconductor
MOSFETs DFN 100V 2A DUAL CH
auf Bestellung 15683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.71 EUR
10+0.45 EUR
100+0.36 EUR
500+0.34 EUR
1000+0.33 EUR
3000+0.31 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
UT6ME5TCR ut6me5tcr-e.pdf
UT6ME5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
auf Bestellung 11979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
35+0.51 EUR
39+0.45 EUR
100+0.39 EUR
250+0.36 EUR
500+0.35 EUR
1000+0.33 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH