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UT6ME5TCR

UT6ME5TCR Rohm Semiconductor

ut6me5tcr-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.37 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details UT6ME5TCR Rohm Semiconductor

Description: MOSFET N/P-CH 100V 2A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: HUML2020L8.

Weitere Produktangebote UT6ME5TCR nach Preis ab 0.31 EUR bis 1.69 EUR

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UT6ME5TCR UT6ME5TCR Hersteller : Rohm Semiconductor ut6me5tcr-e.pdf Description: MOSFET N/P-CH 100V 2A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
18+1.01 EUR
25+0.84 EUR
100+0.64 EUR
250+0.55 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
UT6ME5TCR UT6ME5TCR Hersteller : ROHM Semiconductor ut6me5tcr-e.pdf MOSFETs DFN 100V 2A DUAL CH
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.69 EUR
10+0.85 EUR
100+0.55 EUR
500+0.49 EUR
1000+0.43 EUR
3000+0.33 EUR
9000+0.31 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH