UT8413A MGT BRIGHTEK
Hersteller: MGT BRIGHTEK
Category: Transil diodes - arrays
Description: Diode: TVS array; 5÷8.5V; 5A; DFN2510-10; Features: ESD protection
Mounting: SMD
Case: DFN2510-10
Capacitance: 0.45pF
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 5A
Breakdown voltage: 5...8.5V
Leakage current: 1µA
Max. off-state voltage: 3.3V
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 5÷8.5V; 5A; DFN2510-10; Features: ESD protection
Mounting: SMD
Case: DFN2510-10
Capacitance: 0.45pF
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 5A
Breakdown voltage: 5...8.5V
Leakage current: 1µA
Max. off-state voltage: 3.3V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2975 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
395+ | 0.18 EUR |
475+ | 0.15 EUR |
535+ | 0.13 EUR |
575+ | 0.12 EUR |
3000+ | 0.11 EUR |
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Technische Details UT8413A MGT BRIGHTEK
Category: Transil diodes - arrays, Description: Diode: TVS array; 5÷8.5V; 5A; DFN2510-10; Features: ESD protection, Mounting: SMD, Case: DFN2510-10, Capacitance: 0.45pF, Number of channels: 4, Application: automotive industry, Kind of package: reel; tape, Type of diode: TVS array, Features of semiconductor devices: ESD protection, Max. forward impulse current: 5A, Breakdown voltage: 5...8.5V, Leakage current: 1µA, Max. off-state voltage: 3.3V, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote UT8413A nach Preis ab 0.12 EUR bis 0.18 EUR
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UT8413A | Hersteller : MGT BRIGHTEK |
Category: Transil diodes - arrays Description: Diode: TVS array; 5÷8.5V; 5A; DFN2510-10; Features: ESD protection Mounting: SMD Case: DFN2510-10 Capacitance: 0.45pF Number of channels: 4 Application: automotive industry Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Max. forward impulse current: 5A Breakdown voltage: 5...8.5V Leakage current: 1µA Max. off-state voltage: 3.3V |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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