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UT848ZA

UT848ZA MGT BRIGHTEK

UT848ZA.pdf
Hersteller: MGT BRIGHTEK
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 6.5...16V
Max. forward impulse current: 6A
Case: DFN2510-10
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Capacitance: 0.28pF
Number of channels: 4
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Technische Details UT848ZA MGT BRIGHTEK

Category: Protection diodes - arrays, Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape, Type of diode: TVS array, Max. off-state voltage: 3.3V, Breakdown voltage: 6.5...16V, Max. forward impulse current: 6A, Case: DFN2510-10, Mounting: SMD, Leakage current: 1µA, Kind of package: reel; tape, Version: ESD, Application: automotive industry, Capacitance: 0.28pF, Number of channels: 4.