Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > V10P10HE3/86A
V10P10HE3/86A

V10P10HE3/86A Vishay General Semiconductor - Diodes Division

V10P10.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 10A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details V10P10HE3/86A Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 100V 10A TO277A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 150 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Obsolete, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 10A.