Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > V8P10-E3/87A
V8P10-E3/87A

V8P10-E3/87A Vishay General Semiconductor - Diodes Division

V8P10.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
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Technische Details V8P10-E3/87A Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 100V 8A TO277A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 70 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 8A.